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「ColorOS Tech」GaN : Gallium Nitride

 View:160    Reply:0 | Posted at 22-3-2021 15:35:12 | Display all floors | Copy
This post was edited by CVVR at 22-3-2021 15:35

Hello Fans of ColorOS,

How're all of you? I hope all of you in the ColorOS community are doing well and having fun.  

In this thread I am going to discuss about Gallium Nitride (GaN) Charging Technology

What is Gallium Nitride (GaN) ?

Gallium nitride, also referred to as GaN, is a semiconductor that can be used to produce chips for electronics, in a similar manner to silicon. GaN is a transparent crystalline material, often used in the production of LEDs for the last 30 years, with its high frequency capabilities allowing for the production of violet laser diodes.


Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic,high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.

While silicon is the main material used for chip production, the limits of its properties relating to thermal and electrical transfer means it is getting harder for chip producers to work with it. As the race for smaller chip production processes intensifies, at some point the producers will have to look to other materials that could be used for processor creation in different ways.

This observation was made in 1965, and it largely rang true for the last 50 years. In 2010, though, semiconductor advancement slowed below this pace for the first time. Many analysts (and Moore himself) predict Moore’s Law will be obsolete by 2025.
Why Is Gallium Nitride Superior to Silicon ?

The benefits of GaN compared to silicon boil down to power efficiency. As GaN Systems, a manufacturer that specializes in gallium nitride, explained:-

“All semiconductor materials have what is called a bandgap. This is an energy range in a solid where no electrons can exist. Simply put, a bandgap is related to how well a solid material can conduct electricity. Gallium nitride has a 3.4 eV bandgap, compared to silicon’s 1.12 eV bandgap. Gallium nitride’s wider bandgap means it can sustain higher voltages and higher temperatures than silicon.”
  • Efficient Power Conversion Corporation, another GaN manufacturer, stated that GaN is capable of conducting electrons 1,000 times more efficiently than silicon, and with lower manufacturing costs, to boot.

  • A higher bandgap efficiency means the current can pass through a GaN chip faster than a silicon one. This could result in faster processing capabilities in the future. Simply put, chips made of GaN will be faster, smaller, more power-efficient, and (eventually) cheaper than those made of silicon.
What does this have to do with chargers?

Gallium Nitride (GaN) technology is a new technology that offers fast charging speeds and protection against overheating, overcharging, and short-circuiting—while charging your favorite devices up to 3X faster.
At their simplest, a charger applies a current to a battery in an attempt to reverse a chemical reaction inside each one. While early chargers applied a charge constantly without monitoring the battery itself, potentially leading to overcharging and damaging the battery, later versions include monitoring systems that can vary the current down over time, minimizing the possibility of overcharging.
For phone and device chargers, the use of the high-voltage GaN means more power can be transferred at a far higher efficiency than silicon, making them more suitable for this sort of application.

What's the advantage of using GaN?

The main benefit of using GaN is that it produces less heat than silicon. Because of that, components don’t need too much“breathing space,” and you could pack more of them in a smaller space.

This means you can include the same amount of power as a silicon charger in almost half the size using GaN. This allows you to make smaller charging bricks or include more ports in the same sized brick.

The material can also sustain higher voltages, which means GaN chargers can output more power than silicon-based ones of the same size.
GaN also provides better charging efficiency — but only by a couple of percentage points.

Is Gallium Nitride (GaN) Charger going to be the future ?

All that makes it the perfect successor to silicon. Charger manufacturers love it.

A wider band gap means it can pump out higher voltages (or power), to charge your devices faster; and let the current pass through easier, so less energy is lost while charging.

In comparison, a GaN charger runs at 95% efficiency, while a silicon-based charger runs at 87% efficiency.

In 2021, you can expect to see better PD GaN wireless chargers, smaller (high-capacity) universal portable chargers, and chargers that will help you to save up to 93% energy every time you charge your favorite mobile devices


Here are the advantages of GaN chargers
  • 40% smaller in size. No heatsink and fewer components
  • Doesn’t heat up as much as silicon-based chargers
  • Charge faster OR charge multiple devices at once
  • 95% power efficiency & conserves energy
  • One charger can potentially charge every device

Hope you guys liked my article on Gallium Nitride (GaN) Charging Technology.

Vote of Thanks

I would like to thank  @Zaki1203 for the guidance and support

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